[1] Hyon, C.K., Choi, S.C., Hwang, S.W., Ahn, D., Kim, Y. and Kim, E.K., Appl. Phys. Lett., 75(2), 292 (1999).
[2] Martin, C., Rius, G., Borrise, X. and Perez-murano, F., Nanotechnology, 16, 1016 (2005).
[3] Sheehan, P.E. and Whitman, L. J., Physical Review Letters, 88, 156104 (2002).
[4] Lyuksyutov, S.F. Paramonov, P.B., Juhl, Sh. and Vaia, R.A., Applied Physics Letters, 83, 4405 (2003).
[5] Lyuksyutov, S.F., Paramonov, P.B., Sharipov, R.A. and Sigalov, G., Physical ReviewB, 70, 174110 (2004).
[6] Sheglov, D.V., Latyshev, A.V. and Aseev, A.L., Applied Surface Science, 243, 138 (2005).
[7] ugimura, H., Uchida, T., Kitamura, N. and Masuhara, H., Appl. Phys. Lett., 63, 1288 (1993).
[8] Lyuksyutov, S.F., Paramonov, P.B., Dolog, I. and Ralich, R.M., Nanotechnology,14, 716 (2003).
[9] Park, J. and Lee, H., Material Science and Engineering C, 24, 311(2004).
[10] Fonseca Filho, H. D., Mauricio, M. H. P., Ponciano, C.R. and Prioli, R., Material Science and Engineering B., 112, 194(2004).
[11] Geissler, M. and Xia, Y., Adv. Mater., 16, 1249 (2004).
[12] Garcia, R., Martinez, R. V. and Martinez, J. Chem. Soc.Rev., 35, 29(2006).
[13] Samori, D., Chem. Soc. Rev., 34, 551 (2005).
[14] Heimberg, J. A. and Zandbergen, H. W., Phys. Rev. Lett., 92(12),126101 (2004).
[15] Yeung, K.L.N. and Yao, J., Nanosci. Nanotechol., 4, 1 (2004).
[16] Carallini, M., Biscarini, F., Leon. S., Zerbetto, F., Bottari, G. and Leigh, D.A., Science 299, 531(2003).
[17] Santinacci, L., Zhang, Y. and Schmuki, P., Surface Science, 597(1-3), 11 (2005).
[18] Yasin, Sh., Khalid, M.N., Hasko, D.G., and Sarfraz, S., Microelectronic Engineering, 78-79, 484 (2005).
[19] Sadegh Hassani, S. and Ebrahimpoor Ziaie, E., Materials Science: An Indian Journal, 2 (4-5), 134 (2006).
[20] Santinacci, L., Djenizian, T., Hildebrand, H., Ecoffey, S., Mokdad, H., Campanella, T. and Schmuki